 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Small Signal Transistor Arrays UNA0235 Silicon PNP epitaxial planar transistor (3 elements) Silicon NPN epitaxial planar transistor (3 elements) Unit: mm For motor drives For small motor drive circuits in general 7 0.40.1 654321 0.2+0.1 -0.0 (0.5) 5.50.3 7.70.3 6.50.3 12 (0.8) 1.50.1 1.5+0.2 -0.1 Absolute Maximum Ratings Ta = 25C Parameter PNP Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current NPN Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Overall Total power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Rating -12 -10 -7 -3 -4 12 10 7 3 4 0.5 150 -55 to +150 Unit V V V A A V V V A A W C C 1: Collector 2: Base 3: Collector 4: Base 5: Collector 6: Base 7: Emitter 8: Collector 9: Base 13: Base 10: Collector 14: Emitter 11: Base 12: Collector SO14-G1 Package Marking Symbol: UN235 Internal Connection 7 6 5 4 3 2 1 8 9 10 11 12 13 14 Note) *: When the dissipation on one device is TC = 25C 0.50.2 * Small and lightweight * Low power consumption * Low-voltage drive * With 6 elements incorporated 8 9 10 11 12 13 14 0.90.1 12 45 Features Publication date: December 2002 SJK00054AED 1 UNA0235 Electrical Characteristics Ta = 25C 3C * PNP Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Forward voltage *2 *1 Symbol VCBO VCEO VEBO ICBO hFE VCE(sat) fT Cob VF Conditions IC = -10 A, IE = 0 IC = -1 mA, IB = 0 IE = -10 A, IC = 0 VCB = -10 V, IE = 0 VCE = -1 V, IC = - 0.5 A IC = -2 A, IB = -50 mA VCB = -6 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz IF = -1 A Min -12 -10 -7 Typ Max Unit V V V -1 200 800 - 0.45 150 65 -1.5 A V MHz pF V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Application to the internal diode * NPN Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Forward voltage *2 Symbol VCBO VCEO VEBO ICBO hFE VCE(sat) fT Cob VF Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 1 V, IC = 0.5 A IC = 2 A, IB = 50 mA VCB = 6 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz IF = 1 A 150 50 1.5 200 Min 12 10 7 1 800 0.25 Typ Max Unit V V V A V MHz pF V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Application to the internal diode Common characteristics chart PT Ta 0.6 Total power dissipation PT (W) 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 2 SJK00054AED UNA0235 Characteristics charts of PNP transistor block IC VCE -3.0 -9 mA -8 mA Ta = 25C IC VBE VCE = -1 V VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -10 IC / IB = 40 -1.2 -2.5 IB = -10 mA -1.0 Collector current IC (A) Collector current IC (A) -2.0 -7 mA -6 mA -5 mA -4 mA - 0.8 Ta = 80C -1 Ta = 80C -1.5 -3 mA -2 mA -1 mA - 0.6 25C -25C 25C -25C -1.0 - 0.4 - 0.1 - 0.5 - 0.2 0 0 -2 -4 -6 -8 -10 -12 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.001 - 0.01 - 0.1 -1 -10 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) Collector current IC (A) hFE IC VCE = -1 V Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 1 000 f = 1 MHz Ta = 25C 800 Ta = 80C 600 25C 400 -25C Forward current transfer ratio hFE 100 200 0 - 0.001 - 0.01 - 0.1 -1 -10 10 0 -2 -4 -6 -8 -10 -12 -14 -16 Collector current IC (A) Collector-base voltage VCB (V) SJK00054AED 3 UNA0235 Characteristics charts of NPN transistor block IC VCE 3.5 3.0 Ta = 25C IC VBE IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 1.2 VCE = 1 V 1.0 Collector current IC (A) Collector current IC (A) 2.5 2.0 1.5 1.0 0.5 0 0.8 Ta = 80C 1 Ta = 80C 0.1 -25C 25C 0.6 25C -25C 3 mA 2 mA 1 mA 0.4 0.01 0.2 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.001 0.001 0.01 0.1 1 10 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) Collector current IC (A) hFE IC Collector output capacitance C (pF) (Common base, input open circuited) ob 800 VCE = 1 V Ta = 80C Cob VCB 1 000 f = 1 MHz Ta = 25C Forward current transfer ratio hFE 600 25C 400 -25C 100 200 0 0.001 10 0.01 0.1 1 10 0 2 4 6 8 10 12 14 16 Collector current IC (A) Collector-base voltage VCB (V) 4 SJK00054AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
Price & Availability of UNA0235
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |